?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com KSC2883 rev. b3 KSC2883 npn epitaxial silicon transistor tm november 2006 KSC2883 npn epitaxial silicon transistor low frequency power amplifier ? 3w output application ? collector dissipation : p c =1~2w in mounted on ceramic board ? complement to ksa1203 absolute maximum ratings t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. mounted on cer amic board (250mm 2 x0.8mm) electrical characteristics * t a = 25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 1.5 a i b base current 0.3 a p c p c * collector power dissipation 500 1,000 mw mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage i c = 10 a, i b = 0 30 v bv ebo emitter-base br eakdown voltage i e = 1ma, i c = 0 5 v i cbo collector cut-off current v cb = 30v, i e = 0 100 na i ebo emitter cut- off current v be = 5v, i c = 0 100 na h fe dc current gain v ce = 2v, i c = 500ma 100 320 v ce (sat) collector-emitter saturation voltage i c = 1.5a, i b = 30ma 2.0 v v be (on) base-emitter on voltage v ce = 2v, i c = 500ma 1.0 v f t current gain bandwidth product v ce = 2v, i c = 500ma 120 mhz c ob output capacitance v cb = 10v, i e = 0, f = 1mhz 40 pf sot-89 1 1. base 2. collector 3. emitter 28 83 py ww h fe grage year code weekly code marking
2 www.fairchildsemi.com KSC2883 rev. b3 KSC2883 npn epitaxial silicon transistor h fe classification package marking and ordering information classification o y h fe 100 ~ 200 160 ~ 320 device marking device package reel size tape width quantity 2883 KSC2883 sot-89 13? -- 4,000
3 www.fairchildsemi.com KSC2883 rev. b3 KSC2883 npn epitaxial silicon transistor typical performance characteristics figure 1. static characteristic figure 2. base-emitter on voltage figure 3. dc current gain figure 4. collector-emitter saturation voltage figure 5. safe operating area figure 6. power derating 0246810121416 0.0 0.4 0.8 1.2 1.6 i b = 10ma i b = 8ma i b = 6ma i b = 5ma i b = 4ma i b = 3ma i b = 2ma i b = 1ma i c [a], collector current v ce [v], collector-emitter voltage 0.0 0.4 0.8 1.2 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 2v i c [a], collector current v be [v], turn on voltage 1 10 100 1000 10000 1 10 100 1000 10000 v ce = 2v h fe , dc current gain i c [ma], collector current 10 100 1000 0.01 0.1 1 ic=10*ib vce (sat) , collector-emitter voltage(v) i c [ma], collector current 0.1 1 10 100 0.01 0.1 1 10 v ceo max. 1ms 10ms 100ms 1s i c max. (dc) i c max. (pulse) ta = 25 o c single pulse i c [a], collector current v ce [v], collector-emitter volatge 0 50 100 150 200 0.0 0.4 0.8 1.2 1.6 m o u n t e d o n c e r a m i c b o a r d ( 2 5 0 m m 2 x 0 . 8 m m ) p c [w], power dissipation t a [ o c], ambient temperature
4 www.fairchildsemi.com KSC2883 rev. b3 KSC2883 npn epitaxial silicon transistor mechanical dimensions 0.40 0.10 2.50 0.20 (0.50) (0.40 ) 4.10 0.20 0.40 +0.10 ?.05 0.50 0.10 1.65 0.10 4.50 0.20 1.50 0.20 c0.2 1.50 typ 1.50 typ (1.10) sot-89 dimensions in millimeters
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